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DMC3060LVT-7

DMC3060LVT-7 Diodes Incorporated

DMC3060LVT.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.6A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 372000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
75000+ 0.17 EUR
Mindestbestellmenge: 3000
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Technische Details DMC3060LVT-7 Diodes Incorporated

Description: MOSFET N/P-CH 30V 3.6A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA, Supplier Device Package: TSOT-23-6, Part Status: Active.

Weitere Produktangebote DMC3060LVT-7 nach Preis ab 0.16 EUR bis 0.79 EUR

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DMC3060LVT-7 DMC3060LVT-7 Hersteller : Diodes Incorporated DIOD_S_A0008524211_1-2543049.pdf MOSFET MOSFET BVDSS: 25V-30V TSOT26 T&R 3K
auf Bestellung 7881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.78 EUR
10+ 0.61 EUR
100+ 0.34 EUR
1000+ 0.23 EUR
3000+ 0.2 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 4
DMC3060LVT-7 DMC3060LVT-7 Hersteller : Diodes Incorporated DMC3060LVT.pdf Description: MOSFET N/P-CH 30V 3.6A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 374298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
29+ 0.61 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
DMC3060LVT-7 Hersteller : Diodes Zetex dmc3060lvt.pdf High Enhancement Mode MOSFET
auf Bestellung 207000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
DMC3060LVT-7 Hersteller : Diodes Inc dmc3060lvt.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMC3060LVT-7 Hersteller : Diodes Zetex dmc3060lvt.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar