DMC4029SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 40V 9A/6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.44 EUR |
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Technische Details DMC4029SSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 9A/6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC4029SSD-13 nach Preis ab 0.44 EUR bis 1.24 EUR
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DMC4029SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 40V 9A/6.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4029SSD-13 | Hersteller : Diodes Incorporated |
MOSFET Comp ENH FET 40VDs 20Vgs 1.3W |
auf Bestellung 4713 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC4029SSD-13 Produktcode: 107557 |
Transistoren > MOSFET N-CH |
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DMC4029SSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 40V 5.1A/7A 8-Pin SO T/R |
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DMC4029SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 6.5/-9A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.024/0.045Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMC4029SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 6.5/-9A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.024/0.045Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |