DMC4040SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 6.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC4040SSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 6.8A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.8V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6.8A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMC4040SSD-13 nach Preis ab 0.43 EUR bis 2.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMC4040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 7.3/-7.5A On-state resistance: 0.04/0.045Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
DMC4040SSD-13 | Diodes Incorporated |
MOSFETs MOSFET COMP NPN |
auf Bestellung 4181 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
DMC4040SSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 6.8A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.8A Drain to Source Voltage (Vdss): 40V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 6001 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC4040SSD-13 |
![]() |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.3/-7.5A
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 101+ | 0.71 EUR |
| 138+ | 0.52 EUR |
| 500+ | 0.43 EUR |
| DMC4040SSD-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET COMP NPN
MOSFETs MOSFET COMP NPN
auf Bestellung 4181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.47 EUR |
| 2500+ | 0.46 EUR |
| DMC4040SSD-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 6.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 6.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6001 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 14+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |



