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DMC67D8UFDBQ-7

DMC67D8UFDBQ-7 Diodes Incorporated


DMC67D8UFDBQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V U-DFN2020-
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
Mindestbestellmenge: 3000
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Technische Details DMC67D8UFDBQ-7 Diodes Incorporated

Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W, Power dissipation: 0.58W, Mounting: SMD, Kind of package: reel; tape, Case: U-DFN2020-6, Application: automotive industry, Kind of channel: enhanced, Gate-source voltage: ±20/±12V, Type of transistor: N/P-MOSFET, Drain-source voltage: 60/-20V, Drain current: 0.31/-2.3A, On-state resistance: 4.2Ω/123mΩ, Gate charge: 0.4pC/7.3nC, Polarisation: unipolar.

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DMC67D8UFDBQ-7 Hersteller : Diodes Inc dmc67d8ufdbq.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMC67D8UFDBQ-7 Hersteller : DIODES INCORPORATED DMC67D8UFDBQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W
Power dissipation: 0.58W
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2020-6
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-20V
Drain current: 0.31/-2.3A
On-state resistance: 4.2Ω/123mΩ
Gate charge: 0.4pC/7.3nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMC67D8UFDBQ-7 Hersteller : DIODES INCORPORATED DMC67D8UFDBQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W
Power dissipation: 0.58W
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2020-6
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-20V
Drain current: 0.31/-2.3A
On-state resistance: 4.2Ω/123mΩ
Gate charge: 0.4pC/7.3nC
Polarisation: unipolar
Produkt ist nicht verfügbar