DMC67D8UFDBQ-7 Diodes Incorporated
auf Bestellung 450000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
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Technische Details DMC67D8UFDBQ-7 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W, Power dissipation: 0.58W, Mounting: SMD, Kind of package: reel; tape, Case: U-DFN2020-6, Application: automotive industry, Kind of channel: enhanced, Gate-source voltage: ±20/±12V, Type of transistor: N/P-MOSFET, Drain-source voltage: 60/-20V, Drain current: 0.31/-2.3A, On-state resistance: 4.2Ω/123mΩ, Gate charge: 0.4pC/7.3nC, Polarisation: unipolar.
Weitere Produktangebote DMC67D8UFDBQ-7
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMC67D8UFDBQ-7 | Hersteller : Diodes Inc | High Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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DMC67D8UFDBQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W Power dissipation: 0.58W Mounting: SMD Kind of package: reel; tape Case: U-DFN2020-6 Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20/±12V Type of transistor: N/P-MOSFET Drain-source voltage: 60/-20V Drain current: 0.31/-2.3A On-state resistance: 4.2Ω/123mΩ Gate charge: 0.4pC/7.3nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMC67D8UFDBQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W Power dissipation: 0.58W Mounting: SMD Kind of package: reel; tape Case: U-DFN2020-6 Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20/±12V Type of transistor: N/P-MOSFET Drain-source voltage: 60/-20V Drain current: 0.31/-2.3A On-state resistance: 4.2Ω/123mΩ Gate charge: 0.4pC/7.3nC Polarisation: unipolar |
Produkt ist nicht verfügbar |