auf Bestellung 2760000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.045 EUR |
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Technische Details DMG1012T-13 Diodes Zetex
Description: MOSFET N-CH 20V 630MA SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V.
Weitere Produktangebote DMG1012T-13 nach Preis ab 0.051 EUR bis 0.75 EUR
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DMG1012T-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 630MA SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V |
auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1012T-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 630MA SOT523 T&R Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V |
auf Bestellung 269500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1012T-13 | Hersteller : Diodes Incorporated |
 MOSFET 20V N-Ch Enhance Mode MOSFET |
auf Bestellung 26061 Stücke: Lieferzeit 14-28 Tag (e) |
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DMG1012T-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 T/R |
Produkt ist nicht verfügbar |
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DMG1012T-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-523 |
Produkt ist nicht verfügbar |
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DMG1012T-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Gate charge: 736.6pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 3A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG1012T-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 450mA; Idm: 3A; 280mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.45A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Gate charge: 736.6pC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 3A |
Produkt ist nicht verfügbar |