DMG1012UW-7 JGSEMI
Hersteller: JGSEMI
Transistor N-Channel MOSFET; 20V; 12V; 95mOhm; 1,8A; 400mW; -55°C ~ 125°C; Equivalent: DMG1012UW-7 Diodes; DMG1012UW-7 JGSEMI TDMG1012uw JGS
Anzahl je Verpackung: 250 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.084 EUR |
Produktrezensionen
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Technische Details DMG1012UW-7 JGSEMI
Description: MOSFET N-CH 20V 1A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 290mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V.
Weitere Produktangebote DMG1012UW-7 nach Preis ab 0.042 EUR bis 0.44 EUR
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DMG1012UW-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 20V 1A 450mΩ 290mW DMG1012UW-7 Diodes TDMG1012uw Anzahl je Verpackung: 3000 Stücke |
auf Bestellung 1050 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012UW-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 20V 1A 450mΩ 290mW DMG1012UW-7 Diodes TDMG1012uw Anzahl je Verpackung: 3000 Stücke |
auf Bestellung 12000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012UW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; 0.29W; SOT323; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.29W On-state resistance: 0.3Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape |
auf Bestellung 9092 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1012UW-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET N-CHANNEL SOT-323 |
auf Bestellung 88725 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1012UW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 1A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V |
auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UW-7 | Hersteller : Diodes |
Транзистор N-MOSFET, полевой, 20V, 1A, 0,29W, SOT323 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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DMG1012UW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 1A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 290mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V |
Produkt ist nicht verfügbar |