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DMG1012UWQ-7

DMG1012UWQ-7 Diodes Incorporated

DMG1012UWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 306000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.1 EUR
6000+0.093 EUR
9000+0.088 EUR
15000+0.082 EUR
21000+0.079 EUR
30000+0.075 EUR
75000+0.068 EUR
150000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details DMG1012UWQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 460mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMG1012UWQ-7 nach Preis ab 0.092 EUR bis 0.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMG1012UWQ-7 DMG1012UWQ-7 DIODES INCORPORATED DMG1012UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 0.75A
Gate charge: 1nC
Power dissipation: 0.61W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Application: automotive industry
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
317+0.23 EUR
508+0.14 EUR
687+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ-7 Diodes Incorporated DMG1012UWQ.pdf MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
auf Bestellung 6747 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.51 EUR
10+0.31 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ-7 Diodes Incorporated DMG1012UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 310072 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ.pdf
DMG1012UWQ-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT323
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 0.75A
Gate charge: 1nC
Power dissipation: 0.61W
On-state resistance: 0.75Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Application: automotive industry
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
317+0.23 EUR
508+0.14 EUR
687+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ.pdf
DMG1012UWQ-7
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
auf Bestellung 6747 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.51 EUR
10+0.31 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1012UWQ-7 DMG1012UWQ.pdf
DMG1012UWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 310072 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH