DMG1012UWQ-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.61W
Polarisation: unipolar
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 6A
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
710+ | 0.1 EUR |
790+ | 0.091 EUR |
1030+ | 0.069 EUR |
1090+ | 0.066 EUR |
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Technische Details DMG1012UWQ-7 DIODES INCORPORATED
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 460mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMG1012UWQ-7 nach Preis ab 0.066 EUR bis 0.94 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMG1012UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.75A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 0.61W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 6A Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2710 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 47680 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Zetex | DMG1012UWQ-7 |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Zetex | N-Channel Enhancement Mode MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Zetex | N-Channel Enhancement Mode MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Zetex | N-Channel Enhancement Mode MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT323 T&R 3K |
auf Bestellung 443 Stücke: Lieferzeit 14-28 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Inc | MOSFET BVDSS: 8V24V SOT323 T&R 3K |
Produkt ist nicht verfügbar |
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DMG1012UWQ-7 | Hersteller : Diodes Zetex | N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |