DMG1012UWQ-7 Diodes Zetex
auf Bestellung 312000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.062 EUR |
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Technische Details DMG1012UWQ-7 Diodes Zetex
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 460mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG1012UWQ-7 nach Preis ab 0.065 EUR bis 0.51 EUR
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DMG1012UWQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 8V~24V SOT323 T&RPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 306000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1012UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Gate charge: 1nC Power dissipation: 0.61W On-state resistance: 0.75Ω Drain current: 0.75A Pulsed drain current: 6A Gate-source voltage: ±6V Drain-source voltage: 20V Kind of package: 7 inch reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2414 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG1012UWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT323 Polarisation: unipolar Gate charge: 1nC Power dissipation: 0.61W On-state resistance: 0.75Ω Drain current: 0.75A Pulsed drain current: 6A Gate-source voltage: ±6V Drain-source voltage: 20V Kind of package: 7 inch reel; tape Application: automotive industry |
auf Bestellung 2414 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K |
auf Bestellung 6747 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1012UWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 310072 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1012UWQ-7 | Hersteller : Diodes Inc |
MOSFET BVDSS: 8V24V SOT323 T&R 3K |
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DMG1012UWQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 0.95A 3-Pin SOT-323 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |