DMG1013TQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMG1013TQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 460mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V, Power Dissipation (Max): 270mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMG1013TQ-7 nach Preis ab 0.072 EUR bis 0.48 EUR
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DMG1013TQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3686 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013TQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V~24V SOT523 T&R 3K |
auf Bestellung 207440 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG1013TQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 65+ | 0.27 EUR |
| 104+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| DMG1013TQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V SOT523 T&R 3K
MOSFETs MOSFET BVDSS: 8V~24V SOT523 T&R 3K
auf Bestellung 207440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.086 EUR |
| 6000+ | 0.072 EUR |