DMG1013TQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 460MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 2541000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.067 EUR |
| 6000+ | 0.061 EUR |
| 15000+ | 0.06 EUR |
| 75000+ | 0.059 EUR |
| 150000+ | 0.056 EUR |
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Technische Details DMG1013TQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 460mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V, Power Dissipation (Max): 270mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG1013TQ-7 nach Preis ab 0.055 EUR bis 0.44 EUR
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DMG1013TQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 460MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 2543024 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013TQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG1013TQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 270mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2280 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013TQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG1013TQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 460 mA, 0.5 ohm, SOT-523, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 460mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 270mW Bauform - Transistor: SOT-523 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2280 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013TQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013TQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1013TQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 3K |
auf Bestellung 222276 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013TQ-7 | Hersteller : Diodes Inc |
20V P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMG1013TQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 0.46A 3-Pin SOT-523 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMG1013TQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Mounting: SMD Application: automotive industry Power dissipation: 0.27W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 580pC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -6A Drain-source voltage: -20V Drain current: -330mA On-state resistance: 1.3Ω Type of transistor: P-MOSFET Case: SOT523 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG1013TQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW Mounting: SMD Application: automotive industry Power dissipation: 0.27W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 580pC Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -6A Drain-source voltage: -20V Drain current: -330mA On-state resistance: 1.3Ω Type of transistor: P-MOSFET Case: SOT523 |
Produkt ist nicht verfügbar |