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DMG1016UDWQ-7

DMG1016UDWQ-7 Diodes Zetex


ds31860.pdf Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
auf Bestellung 414000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
9000+ 0.097 EUR
15000+ 0.092 EUR
30000+ 0.086 EUR
60000+ 0.082 EUR
Mindestbestellmenge: 3000
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Technische Details DMG1016UDWQ-7 Diodes Zetex

Description: MOSFET N/P-CH 20V 1.066A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V, Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMG1016UDWQ-7 nach Preis ab 0.095 EUR bis 0.2 EUR

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DMG1016UDWQ-7 DMG1016UDWQ-7 Hersteller : Diodes Zetex ds31860.pdf Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
auf Bestellung 414000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
9000+ 0.095 EUR
Mindestbestellmenge: 3000
DMG1016UDWQ-7 DMG1016UDWQ-7 Hersteller : Diodes Incorporated DMG1016UDWQ_Rev1.3_Jan2022.pdf Description: MOSFET N/P-CH 20V 1.066A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 372000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
9000+ 0.17 EUR
75000+ 0.15 EUR
150000+ 0.14 EUR
Mindestbestellmenge: 3000
DMG1016UDWQ-7 DMG1016UDWQ-7 Hersteller : Diodes Inc 102ds31860.pdf Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
DMG1016UDWQ-7 Hersteller : Diodes Inc 102ds31860.pdf Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
Produkt ist nicht verfügbar
DMG1016UDWQ-7 DMG1016UDWQ-7 Hersteller : DIODES INCORPORATED DMG1016UDWQ_Rev1.3_Jan2022.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.69/-0.548A; Idm: 3.2A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20/-20V
Drain current: 0.69/-0.548A
On-state resistance: 0.45Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 3.2A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG1016UDWQ-7 DMG1016UDWQ-7 Hersteller : Diodes Zetex ds31860.pdf Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
Produkt ist nicht verfügbar
DMG1016UDWQ-7 Hersteller : Diodes Incorporated DIOD_S_A0004565582_1-2542502.pdf MOSFET MOSFET BVDSS: 8V-24V SOT363 T&R 3K
Produkt ist nicht verfügbar
DMG1016UDWQ-7 DMG1016UDWQ-7 Hersteller : DIODES INCORPORATED DMG1016UDWQ_Rev1.3_Jan2022.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.69/-0.548A; Idm: 3.2A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 20/-20V
Drain current: 0.69/-0.548A
On-state resistance: 0.45Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 3.2A
Produkt ist nicht verfügbar