DMG1023UVQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V-24V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 1317000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.24 EUR |
| 9000+ | 0.21 EUR |
| 75000+ | 0.18 EUR |
| 150000+ | 0.17 EUR |
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Technische Details DMG1023UVQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V-24V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 530mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V, Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote DMG1023UVQ-7 nach Preis ab 0.27 EUR bis 1.09 EUR
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| DMG1023UVQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V-24V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 1319960 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMG1023UVQ-7 | Hersteller : Diodes Inc |
High Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMG1023UVQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 622pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMG1023UVQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |
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| DMG1023UVQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 622pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |