Produkte > DIODES INCORPORATED > DMG1023UVQ-7
DMG1023UVQ-7

DMG1023UVQ-7 Diodes Incorporated

DMG1023UVQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.03A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMG1023UVQ-7 Diodes Incorporated

Description: MOSFET 2P-CH 20V 1.03A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 530mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V, Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMG1023UVQ-7 nach Preis ab 0.12 EUR bis 0.68 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMG1023UVQ-7 DMG1023UVQ-7 Hersteller : Diodes Incorporated DMG1023UVQ.pdf Description: MOSFET 2P-CH 20V 1.03A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.41 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
DMG1023UVQ-7 DMG1023UVQ-7 Hersteller : Diodes Incorporated DMG1023UVQ.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 4921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.68 EUR
10+0.42 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.17 EUR
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMG1023UVQ-7 Hersteller : Diodes Inc dmg1023uvq.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG1023UVQ-7 Hersteller : DIODES INCORPORATED DMG1023UVQ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
Drain current: -680mA
Gate charge: 622pC
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH