DMG1024UV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 1.38A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.38A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
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Technische Details DMG1024UV-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 1.38A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 530mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.38A, Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote DMG1024UV-7 nach Preis ab 0.12 EUR bis 1.15 EUR
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DMG1024UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.53W Case: SOT563 Mounting: SMD Kind of package: 7 inch reel; tape Drain current: 0.89A On-state resistance: 0.45Ω Gate-source voltage: ±6V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement |
auf Bestellung 6911 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1024UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 1.38A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.38A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 12455 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1024UV-7 | Diodes Incorporated |
MOSFETs MOSFET N-CHANNEL |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1024UV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.53W
Case: SOT563
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain current: 0.89A
On-state resistance: 0.45Ω
Gate-source voltage: ±6V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.53W
Case: SOT563
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain current: 0.89A
On-state resistance: 0.45Ω
Gate-source voltage: ±6V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
auf Bestellung 6911 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 191+ | 0.37 EUR |
| 313+ | 0.23 EUR |
| 500+ | 0.15 EUR |
| 600+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DMG1024UV-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 1.38A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.38A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 20V 1.38A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.38A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 12455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| DMG1024UV-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET N-CHANNEL
MOSFETs MOSFET N-CHANNEL
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.32 EUR |