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DMG1026UV-7

DMG1026UV-7 Diodes Incorporated

DMG1026UV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 888000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details DMG1026UV-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.41A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 580mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 410mA, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.

Weitere Produktangebote DMG1026UV-7 nach Preis ab 0.21 EUR bis 1.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMG1026UV-7 DMG1026UV-7 DIODES/ZETEX TDMG1026UV-7_Diodes_DIODES_0001.pdf Transistor 2xN-Channel MOSFET; 60V; 20V; 2,1Ohm; 440mA; 580mW; -55°C ~ 150°C; DMG1026UV-7 TDMG1026UV-7 Diodes
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
3000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV-7 DIODES INCORPORATED DMG1026UV.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Version: ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Pulsed drain current: 1A
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 683 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.75 EUR
157+0.55 EUR
231+0.37 EUR
272+0.31 EUR
500+0.21 EUR
Mindestbestellmenge: 114 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV-7 Diodes Incorporated DMG1026UV.pdf Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 890713 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
36+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV-7 Diodes Incorporated DMG1026UV.pdf MOSFETs MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
auf Bestellung 63914 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.15 EUR
10+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
3000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 TDMG1026UV-7_Diodes_DIODES_0001.pdf
DMG1026UV-7
Hersteller: DIODES/ZETEX
Transistor 2xN-Channel MOSFET; 60V; 20V; 2,1Ohm; 440mA; 580mW; -55°C ~ 150°C; DMG1026UV-7 TDMG1026UV-7 Diodes
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
3000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Version: ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Pulsed drain current: 1A
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 683 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
114+0.75 EUR
157+0.55 EUR
231+0.37 EUR
272+0.31 EUR
500+0.21 EUR
Mindestbestellmenge: 114 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 890713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UV-7 DMG1026UV.pdf
DMG1026UV-7
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
auf Bestellung 63914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.15 EUR
10+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
3000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH