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DMG1026UVQ-7

DMG1026UVQ-7 Diodes Incorporated

DMG1026UVQ_NRND.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.44A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMG1026UVQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.44A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 650mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMG1026UVQ-7 nach Preis ab 0.16 EUR bis 0.84 EUR

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DMG1026UVQ-7 DMG1026UVQ-7 Hersteller : Diodes Incorporated DMG1026UV.pdf MOSFETs MOSFET BVDSS:
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.5 EUR
100+0.25 EUR
1000+0.23 EUR
3000+0.21 EUR
6000+0.16 EUR
Mindestbestellmenge: 4
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DMG1026UVQ-7 DMG1026UVQ-7 Hersteller : Diodes Incorporated DMG1026UVQ_NRND.pdf Description: MOSFET 2N-CH 60V 0.44A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DMG1026UVQ-7 DMG1026UVQ-7 Hersteller : Diodes Inc 207741061275938dmg1026uv.pdf Trans MOSFET N-CH 60V 0.41A Automotive 6-Pin SOT-563 T/R
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DMG1026UVQ-7 Hersteller : DIODES INCORPORATED DMG1026UVQ_NRND.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.32A
Gate charge: 0.45pC
On-state resistance: 2.1Ω
Power dissipation: 0.65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH