| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
| 5000+ | 0.15 EUR |
| 10000+ | 0.12 EUR |
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Technische Details DMG2302UKQ-13 Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG2302UKQ-13 nach Preis ab 0.15 EUR bis 0.74 EUR
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DMG2302UKQ-13 | Diodes Incorporated |
 Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 7609 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG2302UKQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.8A SOT23 T&R 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7609 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 5000+ | 0.15 EUR |