Produkte > DIODES ZETEX > DMG2302UQ-7
DMG2302UQ-7

DMG2302UQ-7 Diodes Zetex

dmg2302uq.pdf Hersteller: Diodes Zetex
N-Channel Enhancement Mode Mosfet Automotive AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMG2302UQ-7 Diodes Zetex

Description: MOSFET N-CH 20V 4.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 50µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMG2302UQ-7 nach Preis ab 0.22 EUR bis 0.79 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMG2302UQ-7 DMG2302UQ-7 Hersteller : Diodes Incorporated DMG2302UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.55 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 DMG2302UQ-7 Hersteller : Diodes Incorporated DMG2302UQ.pdf MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 27A
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.63 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
3000+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 DMG2302UQ-7 Hersteller : Diodes Inc dmg2302uq.pdf N-Channel Enhancement Mode Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 Hersteller : DIODES INCORPORATED DMG2302UQ.pdf DMG2302UQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG2302UQ-7 DMG2302UQ-7 Hersteller : Diodes Incorporated DMG2302UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH