DMG2302UQ-7 Diodes Incorporated
auf Bestellung 2989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
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Technische Details DMG2302UQ-7 Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 50µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG2302UQ-7 nach Preis ab 0.27 EUR bis 0.76 EUR
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DMG2302UQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 4.2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1854 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2302UQ-7 | Hersteller : Diodes Inc |
N-Channel Enhancement Mode Mosfet |
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DMG2302UQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
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DMG2302UQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V Qualification: AEC-Q101 |
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DMG2302UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 4.3nC Application: automotive industry Pulsed drain current: 25A |
Produkt ist nicht verfügbar |