DMG2307LQ-7 Diodes Zetex
auf Bestellung 174000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
Produktrezensionen
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Technische Details DMG2307LQ-7 Diodes Zetex
Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V, Power Dissipation (Max): 760mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG2307LQ-7 nach Preis ab 0.096 EUR bis 0.68 EUR
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DMG2307LQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V SOT23 T&RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2307LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.9W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 8.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1854 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG2307LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.9W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 8.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 1854 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2307LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 71575 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2307LQ-7 | Hersteller : Diodes Incorporated |
MOSFETs 30V P-Ch Enhancement Mode |
auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2307LQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2307LQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG2307LQ-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2307LQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG2307LQ-7 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.07 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2307LQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG2307LQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DMG2307LQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |