Technische Details DMG3401LSNQ-7 Diodes Zetex
Description: MOSFET P-CH 30V 3A SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-59-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMG3401LSNQ-7 nach Preis ab 0.27 EUR bis 1.34 EUR
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DMG3401LSNQ-7 | Hersteller : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 25V 30V SC59 T&R 3K |
auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3401LSNQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2757 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3401LSNQ-7 | Hersteller : Diodes Zetex |
MOSFET 31V to 40V SC59 3K Automotive AEC-Q101 |
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DMG3401LSNQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
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| DMG3401LSNQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59 Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SC59 Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -2.9A Gate charge: 25.1nC On-state resistance: 85mΩ Power dissipation: 1.2W Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |