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Technische Details DMG3401LSNQ-7 Diodes Zetex
Description: MOSFET P-CH 30V 3A SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-59-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMG3401LSNQ-7 nach Preis ab 0.33 EUR bis 1.63 EUR
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DMG3401LSNQ-7 | Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 25V~30V SC59 T&R 3K |
auf Bestellung 2720 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3401LSNQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 1747 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG3401LSNQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V~30V SC59 T&R 3K
MOSFETs MOSFET BVDSS: 25V~30V SC59 T&R 3K
auf Bestellung 2720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.61 EUR |
| 10+ | 1 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.37 EUR |
| 6000+ | 0.33 EUR |
| DMG3401LSNQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3A SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3A SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 21+ | 1.02 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |