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DMG3402LQ-13

DMG3402LQ-13 Diodes Incorporated


DIOD_S_A0008363716_1-2542990.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.89 EUR
10+0.55 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.23 EUR
2500+0.21 EUR
5000+0.19 EUR
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Technische Details DMG3402LQ-13 Diodes Incorporated

Description: MOSFET N-CH 30V 4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V, Qualification: AEC-Q101.

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DMG3402LQ-13 DMG3402LQ-13 Hersteller : Diodes Inc dmg3402lq.pdf Trans MOSFET N-CH 30V 4A Automotive 3-Pin SOT-23 T/R
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DMG3402LQ-13 DMG3402LQ-13 Hersteller : Diodes Zetex dmg3402lq.pdf Trans MOSFET N-CH 30V 4A Automotive AEC-Q101 3-Pin SOT-23 T/R
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DMG3402LQ-13 DMG3402LQ-13 Hersteller : DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
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DMG3402LQ-13 DMG3402LQ-13 Hersteller : Diodes Incorporated DMG3402LQ.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG3402LQ-13 DMG3402LQ-13 Hersteller : DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Gate charge: 11.7nC
On-state resistance: 85mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH