Weitere Produktangebote DMG3414U-7 nach Preis ab 0.19 EUR bis 1.09 EUR
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DMG3414U-7 | Diodes Incorporated |
 Description: MOSFET N-CH 20V 4.2A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3414U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23 Case: SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 37mΩ Power dissipation: 0.78W Drain current: 3.2A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3414U-7 | Diodes Incorporated |
MOSFETs N-Ch 20V VDSS 8 Vgss 30A IDM |
auf Bestellung 6646 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3414U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 4.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V |
auf Bestellung 99029 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3414U-7 | Diodes Zetex |
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R |
auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 612 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMG3414U-7 | Diodes Zetex |
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R |
auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 612 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMG3414U-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 21000+ | 0.2 EUR |
| 30000+ | 0.19 EUR |
| DMG3414U-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 37mΩ
Power dissipation: 0.78W
Drain current: 3.2A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 37mΩ
Power dissipation: 0.78W
Drain current: 3.2A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 162+ | 0.44 EUR |
| DMG3414U-7 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch 20V VDSS 8 Vgss 30A IDM
MOSFETs N-Ch 20V VDSS 8 Vgss 30A IDM
auf Bestellung 6646 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.23 EUR |
| DMG3414U-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
auf Bestellung 99029 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| DMG3414U-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)
| DMG3414U-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)