DMG3415UFY4Q-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 16V 2.5A X2-DFN2015
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN2015-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.29 EUR |
| 30000+ | 0.28 EUR |
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Technische Details DMG3415UFY4Q-7 Diodes Incorporated
Description: MOSFET P-CH 16V 2.5A X2-DFN2015, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN2015-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V.
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DMG3415UFY4Q-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 16V 2.5A X2-DFN2015 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V |
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DMG3415UFY4Q-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 16V 2.5A Automotive 3-Pin X2-DFN T/R |
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Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -16V; -2.2A; Idm: -12A; 1.35W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -16V Drain current: -2.2A Pulsed drain current: -12A Power dissipation: 1.35W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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