auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.098 EUR |
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Technische Details DMG3418L-13 Diodes Zetex
Description: MOSFET N-CH 30V 4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V.
Weitere Produktangebote DMG3418L-13 nach Preis ab 0.18 EUR bis 0.19 EUR
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DMG3418L-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 4A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG3418L-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG3418L-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG3418L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 15A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG3418L-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W |
Produkt ist nicht verfügbar |
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DMG3418L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 15A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |