DMG4407SSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 21+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
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Technische Details DMG4407SSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.45W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG4407SSS-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMG4407SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 9.9A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DMG4407SSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DMG4407SSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -80A Power dissipation: 1.82W Case: SO8 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: SMD Gate charge: 41nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMG4407SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMG4407SSS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMG4407SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.82W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -80A
Power dissipation: 1.82W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH