auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.28 EUR |
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Technische Details DMG4407SSS-13 Diodes Zetex
Description: MOSFET P-CH 30V 9.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V, Power Dissipation (Max): 1.45W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V.
Weitere Produktangebote DMG4407SSS-13 nach Preis ab 0.34 EUR bis 1.06 EUR
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DMG4407SSS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 30V 9.9A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4407SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 9.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
auf Bestellung 17711 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4407SSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K |
auf Bestellung 141 Stücke: Lieferzeit 14-28 Tag (e) |
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DMG4407SSS-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG4407SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -10A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 1.82W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG4407SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -80A; 1.82W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -10A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 1.82W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Case: SO8 |
Produkt ist nicht verfügbar |