DMG4496SSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.42W (Ta)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.17 EUR |
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Technische Details DMG4496SSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 10A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.42W (Ta), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG4496SSS-13 nach Preis ab 0.23 EUR bis 0.65 EUR
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DMG4496SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.42W (Ta) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 5865 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4496SSS-13 | Hersteller : Diodes INC. |
N-канальний ПТ, Udss, В = 30, Id = 10, Ptot, Вт = 1,42, Тип монт. = smd, Ciss, пФ @ Uds, В = 493,5 @ 15, Qg, нКл = 10,2 @ 10 В, Rds = 21,5 мОм @ 10 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 250 мкА,... Група товару: Транзистори Корпус: SOICN-8 Од. Anzahl je Verpackung: 2500 Stücke |
verfügbar 2 Stücke: |
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DMG4496SSS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET N-CHANNEL |
Produkt ist nicht verfügbar |