DMG4496SSSQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.42W (Ta), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).