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DMG4710SSS-13

DMG4710SSS-13 Diodes Incorporated


DMG4710SSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
auf Bestellung 496 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.46 EUR
14+ 1.26 EUR
100+ 0.88 EUR
Mindestbestellmenge: 13
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Technische Details DMG4710SSS-13 Diodes Incorporated

Description: MOSFET N-CH 30V 8.8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 1.54W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V.

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DMG4710SSS-13 DMG4710SSS-13 Hersteller : Diodes Incorporated ds32055-89280.pdf MOSFET MOSFET N-CHANNEL
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
DMG4710SSS-13 DMG4710SSS-13 Hersteller : Diodes Inc ds32055.pdf Trans MOSFET N-CH 30V 8.8A 8-Pin SO T/R
Produkt ist nicht verfügbar
DMG4710SSS-13 DMG4710SSS-13 Hersteller : Diodes Incorporated DMG4710SSS.pdf Description: MOSFET N-CH 30V 8.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar