DMG4710SSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.8A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG4710SSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 8.8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11.7A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 1.54W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V.
Weitere Produktangebote DMG4710SSS-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
DMG4710SSS-13 | Diodes Incorporated |
MOSFET MOSFET N-CHANNEL |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMG4710SSS-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFET MOSFET N-CHANNEL
MOSFET MOSFET N-CHANNEL
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)


