DMG4800LK3-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
| 7500+ | 0.31 EUR |
| 12500+ | 0.3 EUR |
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Technische Details DMG4800LK3-13 Diodes Incorporated
Description: MOSFET N-CH 30V 10A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Power Dissipation (Max): 1.71W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V.
Weitere Produktangebote DMG4800LK3-13 nach Preis ab 0.29 EUR bis 1.37 EUR
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DMG4800LK3-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A |
auf Bestellung 8176 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4800LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
auf Bestellung 35006 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG4800LK3-13 |
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Hersteller: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A
auf Bestellung 8176 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.31 EUR |
| 5000+ | 0.29 EUR |
| DMG4800LK3-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
Description: MOSFET N-CH 30V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
auf Bestellung 35006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |