Produkte > DIODES ZETEX > DMG4800LSDQ-13
DMG4800LSDQ-13

DMG4800LSDQ-13 Diodes Zetex


1580ds31858.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R
auf Bestellung 107500 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.31 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMG4800LSDQ-13 Diodes Zetex

Description: MOSFET 2N-CH 30V 7.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.17W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote DMG4800LSDQ-13 nach Preis ab 0.32 EUR bis 1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Incorporated DMG4800LSD.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.37 EUR
5000+ 0.35 EUR
12500+ 0.33 EUR
25000+ 0.32 EUR
Mindestbestellmenge: 2500
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Incorporated DMG4800LSD.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 109596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.85 EUR
100+ 0.59 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 18
DMG4800LSDQ-13 Hersteller : Diodes Incorporated DIODS21709_1-2541784.pdf MOSFET MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K
auf Bestellung 6184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1 EUR
10+ 0.86 EUR
100+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.42 EUR
2500+ 0.39 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 3
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Inc 1580ds31858.pdf Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R
Produkt ist nicht verfügbar
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Zetex 1580ds31858.pdf Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R
Produkt ist nicht verfügbar
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : DIODES INCORPORATED DMG4800LSD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar