DMG4800LSDQ-13 Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.36 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2500 Stücke
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Technische Details DMG4800LSDQ-13 Diodes Zetex
Description: MOSFET 2N-CH 30V 7.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.17W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMG4800LSDQ-13 nach Preis ab 0.38 EUR bis 1.93 EUR
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DMG4800LSDQ-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 7.5A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4800LSDQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K |
auf Bestellung 5913 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4800LSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 121900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSDQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.42 EUR |
| 12500+ | 0.4 EUR |
| DMG4800LSDQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K
auf Bestellung 5913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.38 EUR |
| DMG4800LSDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 121900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 18+ | 1.2 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |