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DMG4800LSDQ-13

DMG4800LSDQ-13 Diodes Zetex


1580ds31858.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R
auf Bestellung 120000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.29 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMG4800LSDQ-13 Diodes Zetex

Description: MOSFET 2N-CH 30V 7.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.17W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote DMG4800LSDQ-13 nach Preis ab 0.32 EUR bis 1.62 EUR

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DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Incorporated DMG4800LSD.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
12500+0.34 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Incorporated DMG4800LSD.pdf MOSFETs MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K
auf Bestellung 5913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.51 EUR
10+0.94 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.42 EUR
2500+0.32 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Incorporated DMG4800LSD.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 121900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.01 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : Diodes Inc 1580ds31858.pdf Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8B2440DD1AA18&compId=DMG4800LSD.pdf?ci_sign=e3254b0e55d3ed044ee71794e8176928d2301b0b Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.5W
Drain current: 8.4A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG4800LSDQ-13 DMG4800LSDQ-13 Hersteller : DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8B2440DD1AA18&compId=DMG4800LSD.pdf?ci_sign=e3254b0e55d3ed044ee71794e8176928d2301b0b Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.5W
Drain current: 8.4A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH