DMG5802LFX-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 24V 6.5A 6DFN
Supplier Device Package: W-DFN5020-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 24V
Power - Max: 980mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 17+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
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Technische Details DMG5802LFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 24V 6.5A 6DFN, Supplier Device Package: W-DFN5020-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Drain to Source Voltage (Vdss): 24V, Power - Max: 980mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-VFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG5802LFX-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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DMG5802LFX-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 24V 6.5A 6DFN Supplier Device Package: W-DFN5020-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 24V Power - Max: 980mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMG5802LFX-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 24V 6.5A 6DFN
Supplier Device Package: W-DFN5020-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 24V
Power - Max: 980mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 24V 6.5A 6DFN
Supplier Device Package: W-DFN5020-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 24V
Power - Max: 980mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH