DMG5802LFX-7 Diodes Incorporated
auf Bestellung 2981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.05 EUR |
| 10+ | 0.90 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.37 EUR |
| 6000+ | 0.36 EUR |
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Technische Details DMG5802LFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 24V 6.5A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 980mW, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V, Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: W-DFN5020-6.
Weitere Produktangebote DMG5802LFX-7 nach Preis ab 0.48 EUR bis 1.67 EUR
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DMG5802LFX-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 24V 6.5A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: W-DFN5020-6 |
auf Bestellung 2779 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG5802LFX-7 | Hersteller : DIODES INCORPORATED |
DMG5802LFX-7 SMD N channel transistors |
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DMG5802LFX-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 24V 6.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: W-DFN5020-6 |
Produkt ist nicht verfügbar |