DMG5802LFX-7 Diodes Incorporated

Description: MOSFET 2N-CH 24V 6.5A 6DFN, Supplier Device Package: W-DFN5020-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Drain to Source Voltage (Vdss): 24V, Power - Max: 980mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-VFDFN Exposed Pad, Packaging: Tape & Reel (TR).