DMG6301UDW-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 429000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 30000+ | 0.14 EUR |
| 75000+ | 0.12 EUR |
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Technische Details DMG6301UDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 240mA, Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMG6301UDW-7 nach Preis ab 0.14 EUR bis 1.02 EUR
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DMG6301UDW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 25V 0.24A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 240mA Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 431990 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG6301UDW-7 | Hersteller : Diodes Incorporated |
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W |
auf Bestellung 2700 Stücke: Lieferzeit 14-28 Tag (e) |
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DMG6301UDW-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6301UDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363 Mounting: SMD Case: SOT363 Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 5Ω Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMG6301UDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363 Mounting: SMD Case: SOT363 Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 5Ω Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |