DMG6301UDW-7 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.81 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.14 EUR |
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Technische Details DMG6301UDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 240mA, Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMG6301UDW-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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DMG6301UDW-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 25V 0.24A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 240mA Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMG6301UDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 0.24A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Current - Continuous Drain (Id) @ 25°C: 240mA Drain to Source Voltage (Vdss): 25V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DMG6301UDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363; ESD Mounting: SMD Drain-source voltage: 25V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT363 On-state resistance: 5Ω Power dissipation: 0.3W Polarisation: unipolar Version: ESD Drain current: 0.22A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMG6301UDW-7 | Diodes Zetex |
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMG6301UDW-7 | Diodes Zetex |
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMG6301UDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMG6301UDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 240mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 0.24A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 240mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMG6301UDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363; ESD
Mounting: SMD
Drain-source voltage: 25V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT363
On-state resistance: 5Ω
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.22A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W; SOT363; ESD
Mounting: SMD
Drain-source voltage: 25V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT363
On-state resistance: 5Ω
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.22A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMG6301UDW-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMG6301UDW-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R
Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH