DMG6301UDW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.1 EUR |
| 15000+ | 0.096 EUR |
| 21000+ | 0.092 EUR |
| 30000+ | 0.088 EUR |
| 75000+ | 0.08 EUR |
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Technische Details DMG6301UDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 240mA, Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMG6301UDW-7 nach Preis ab 0.093 EUR bis 0.69 EUR
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DMG6301UDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 0.24A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Current - Continuous Drain (Id) @ 25°C: 240mA Drain to Source Voltage (Vdss): 25V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6301UDW-7 | Diodes Incorporated |
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG6301UDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 240mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 0.24A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 240mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 51+ | 0.35 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| DMG6301UDW-7 |
|
Hersteller: Diodes Incorporated
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.69 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.13 EUR |
| 9000+ | 0.1 EUR |
| 24000+ | 0.093 EUR |