DMG6402LDM-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 5.3A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 1.12W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
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Technische Details DMG6402LDM-7 Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Power Dissipation (Max): 1.12W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V.
Weitere Produktangebote DMG6402LDM-7 nach Preis ab 0.16 EUR bis 1.23 EUR
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DMG6402LDM-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET N-CHANNEL SOT-26 |
auf Bestellung 3692 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6402LDM-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 1.12W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V |
auf Bestellung 6843 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG6402LDM-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 30V 5.3A 27mΩ 1.12W DMG6402LDM-7 Diodes TDMG6402ldm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6402LDM-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 5.3A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
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DMG6402LDM-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 5.3A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
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DMG6402LDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26 On-state resistance: 40mΩ Mounting: SMD Case: SOT26 Drain-source voltage: 30V Drain current: 4.2A Type of transistor: N-MOSFET Power dissipation: 1.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG6402LDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 31A; 1.12W; SOT26 On-state resistance: 40mΩ Mounting: SMD Case: SOT26 Drain-source voltage: 30V Drain current: 4.2A Type of transistor: N-MOSFET Power dissipation: 1.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |