DMG6601LVT-7 Diodes Zetex
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
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Technische Details DMG6601LVT-7 Diodes Zetex
Description: MOSFET N/P-CH 30V 3.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 850mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V, Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active.
Weitere Produktangebote DMG6601LVT-7 nach Preis ab 0.12 EUR bis 0.67 EUR
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DMG6601LVT-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6601LVT-7 | Hersteller : DIODES/ZETEX |
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26 DMG6601LVT-7 TDMG6601lvt Anzahl je Verpackung: 100 Stücke |
auf Bestellung 2480 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6601LVT-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3/-2A Power dissipation: 0.54W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 0.065/0.142Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6601LVT-7 | Hersteller : Diodes Incorporated |
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET |
auf Bestellung 128382 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6601LVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.8A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 850mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6601LVT-7 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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| DMG6601LVT-7 | Hersteller : Diodes |
MOSFET N/P-CH 30V 26TSOT Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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DMG6601LVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.8A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 850mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
Produkt ist nicht verfügbar |