Technische Details DMG6601LVT-7 Diodes Zetex
Description: MOSFET N/P-CH 30V 3.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 850mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V, Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active.
Weitere Produktangebote DMG6601LVT-7 nach Preis ab 0.15 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMG6601LVT-7 | Diodes Zetex |
 Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6601LVT-7 | DIODES/ZETEX |
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26 DMG6601LVT-7 TDMG6601lvt Anzahl je Verpackung: 100 Stücke |
auf Bestellung 1930 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG6601LVT-7 | Diodes Incorporated |
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET |
auf Bestellung 128382 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6601LVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.8A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 850mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG6601LVT-7 |
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Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R
Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| DMG6601LVT-7 |
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Hersteller: DIODES/ZETEX
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26 DMG6601LVT-7 TDMG6601lvt
Anzahl je Verpackung: 100 Stücke
Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26 DMG6601LVT-7 TDMG6601lvt
Anzahl je Verpackung: 100 Stücke
auf Bestellung 1930 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.3 EUR |
| DMG6601LVT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET
auf Bestellung 128382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.76 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.15 EUR |
| DMG6601LVT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 850mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET N/P-CH 30V 3.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 850mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 43+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |