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DMG6602SVTX-7

DMG6602SVTX-7 Diodes Zetex


dmg6602svtx1.pdf Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 30V 3.4A/2.8A 6-Pin TSOT-26 T/R
auf Bestellung 141000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
Mindestbestellmenge: 3000
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Technische Details DMG6602SVTX-7 Diodes Zetex

Description: MOSFET N/P-CH 30V 3.4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMG6602SVTX-7 nach Preis ab 0.088 EUR bis 0.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : Diodes Zetex dmg6602svtx1.pdf Trans MOSFET N/P-CH 30V 3.4A/2.8A 6-Pin TSOT-26 T/R
auf Bestellung 138000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.14 EUR
9000+ 0.12 EUR
24000+ 0.11 EUR
30000+ 0.1 EUR
45000+ 0.096 EUR
75000+ 0.088 EUR
Mindestbestellmenge: 3000
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : Diodes Zetex dmg6602svtx1.pdf Trans MOSFET N/P-CH 30V 3.4A/2.8A 6-Pin TSOT-26 T/R
auf Bestellung 138000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.14 EUR
9000+ 0.12 EUR
24000+ 0.11 EUR
30000+ 0.1 EUR
45000+ 0.096 EUR
75000+ 0.088 EUR
Mindestbestellmenge: 3000
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : Diodes Incorporated Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.14 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : Diodes Incorporated Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 145643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
39+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : Diodes Incorporated DiodesInc._DMG6602SVTX_R3-1774709.pdf MOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 53392 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.89 EUR
77+ 0.68 EUR
143+ 0.36 EUR
1000+ 0.25 EUR
3000+ 0.23 EUR
9000+ 0.22 EUR
24000+ 0.2 EUR
Mindestbestellmenge: 59
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : Diodes Inc dmg6602svtx1.pdf Trans MOSFET N/P-CH 30V 3.4A/2.8A 6-Pin TSOT-26 T/R
Produkt ist nicht verfügbar
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.8W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 100/140mΩ
Mounting: SMD
Gate charge: 13/9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMG6602SVTX-7 DMG6602SVTX-7 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.8W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 100/140mΩ
Mounting: SMD
Gate charge: 13/9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar