Produkte > DIODES INCORPORATED > DMG6898LSDQ-13
DMG6898LSDQ-13

DMG6898LSDQ-13 Diodes Incorporated


DMG6898LSD.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 22500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.55 EUR
5000+0.52 EUR
12500+0.48 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMG6898LSDQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.28W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.

Weitere Produktangebote DMG6898LSDQ-13 nach Preis ab 0.51 EUR bis 1.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMG6898LSDQ-13 DMG6898LSDQ-13 Hersteller : Diodes Incorporated DMG6898LSD.pdf Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 24984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
15+1.25 EUR
100+0.86 EUR
500+0.72 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DMG6898LSDQ-13 DMG6898LSDQ-13 Hersteller : Diodes Incorporated DIOD_S_A0000148450_1-2541912.pdf MOSFETs Dual N-Ch Enh FET 30V 9.8A 20Vdss
auf Bestellung 10546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.57 EUR
10+1.13 EUR
100+0.78 EUR
500+0.62 EUR
1000+0.58 EUR
2500+0.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMG6898LSDQ-13 Hersteller : DIODES INCORPORATED DMG6898LSD.pdf DMG6898LSDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH