DMG7408SFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
auf Bestellung 272000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| 10000+ | 0.22 EUR |
| 50000+ | 0.2 EUR |
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Technische Details DMG7408SFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 7A POWERDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V.
Weitere Produktangebote DMG7408SFG-7 nach Preis ab 0.22 EUR bis 0.93 EUR
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DMG7408SFG-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2 |
auf Bestellung 1691 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG7408SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 7A POWERDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V |
auf Bestellung 272574 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG7408SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 7A POWERDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V |
auf Bestellung 272574 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG7408SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Drain-source voltage: 30V Drain current: 7.5A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Mounting: SMD Case: PowerDI3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMG7408SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Drain-source voltage: 30V Drain current: 7.5A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Mounting: SMD Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |