DMG8601UFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 920mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: U-DFN3030-8
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG8601UFG-7 Diodes Incorporated
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm, tariffCode: 85411000, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, Dauer-Drainstrom Id, n-Kanal: 6.1A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 920mW, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: U-DFN3030, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 920mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote DMG8601UFG-7 nach Preis ab 0.37 EUR bis 1.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMG8601UFG-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.1A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 920mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: U-DFN3030-8 |
auf Bestellung 62902 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG8601UFG-7 | Diodes Incorporated |
MOSFETs LDO POSITIVE REG 2.7V/1A |
auf Bestellung 2887 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG8601UFG-7 | DIODES INC. |
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 6.1A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 920mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 920mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG8601UFG-7 | DIODES INC. |
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 6.1A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 920mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 920mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG8601UFG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.1A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 920mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: U-DFN3030-8
Description: MOSFET 2N-CH 20V 6.1A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 920mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: U-DFN3030-8
auf Bestellung 62902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 25+ | 0.83 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| DMG8601UFG-7 |
|
Hersteller: Diodes Incorporated
MOSFETs LDO POSITIVE REG 2.7V/1A
MOSFETs LDO POSITIVE REG 2.7V/1A
auf Bestellung 2887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.4 EUR |
| 6000+ | 0.37 EUR |
| DMG8601UFG-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 920mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 920mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 920mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 920mW
Betriebstemperatur, max.: 150°C
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 129+ | 1.95 EUR |
| 216+ | 1.07 EUR |
| 333+ | 0.64 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| DMG8601UFG-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 920mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 920mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMG8601UFG-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6.1 A, 6.1 A, 0.023 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 920mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.023ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 920mW
Betriebstemperatur, max.: 150°C
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 129+ | 1.95 EUR |
| 216+ | 1.07 EUR |
| 333+ | 0.64 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |