DMG8601UFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 6.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 920mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: U-DFN3030-8
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.30 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
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Technische Details DMG8601UFG-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.1A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 920mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.1A, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V, Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: U-DFN3030-8.
Weitere Produktangebote DMG8601UFG-7 nach Preis ab 0.32 EUR bis 1.30 EUR
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DMG8601UFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.1A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 920mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: U-DFN3030-8 |
auf Bestellung 62902 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG8601UFG-7 | Hersteller : Diodes Incorporated |
MOSFETs LDO POSITIVE REG 2.7V/1A |
auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG8601UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW Power dissipation: 920mW Case: U-DFN3030-8 Polarisation: unipolar Drain current: 5.2A Kind of package: 7 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±12V Pulsed drain current: 27A On-state resistance: 34mΩ Type of transistor: N-MOSFET Drain-source voltage: 20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMG8601UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW Power dissipation: 920mW Case: U-DFN3030-8 Polarisation: unipolar Drain current: 5.2A Kind of package: 7 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±12V Pulsed drain current: 27A On-state resistance: 34mΩ Type of transistor: N-MOSFET Drain-source voltage: 20V |
Produkt ist nicht verfügbar |