DMG8822UTS-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.28 EUR |
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Technische Details DMG8822UTS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8, Gate charge: 9.6nC, On-state resistance: 37mΩ, Power dissipation: 0.87W, Gate-source voltage: ±8V, Kind of package: 13 inch reel; tape, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Case: TSSOP8, Polarisation: unipolar, Pulsed drain current: 31A, Drain-source voltage: 20V, Drain current: 3.9A.
Weitere Produktangebote DMG8822UTS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMG8822UTS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 4.9A 8TSSOP |
Produkt ist nicht verfügbar |
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| DMG8822UTS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8 Gate charge: 9.6nC On-state resistance: 37mΩ Power dissipation: 0.87W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TSSOP8 Polarisation: unipolar Pulsed drain current: 31A Drain-source voltage: 20V Drain current: 3.9A |
Produkt ist nicht verfügbar |