
DMG8822UTS-13 Diodes Incorporated
auf Bestellung 2458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 0.85 EUR |
10+ | 0.73 EUR |
100+ | 0.55 EUR |
500+ | 0.43 EUR |
1000+ | 0.33 EUR |
2500+ | 0.28 EUR |
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Technische Details DMG8822UTS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8, Mounting: SMD, Case: TSSOP8, Drain-source voltage: 20V, Drain current: 3.9A, On-state resistance: 37mΩ, Type of transistor: N-MOSFET, Power dissipation: 0.87W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 9.6nC, Kind of channel: enhancement, Gate-source voltage: ±8V, Pulsed drain current: 31A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMG8822UTS-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMG8822UTS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8 Mounting: SMD Case: TSSOP8 Drain-source voltage: 20V Drain current: 3.9A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 0.87W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 9.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 31A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG8822UTS-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMG8822UTS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8 Mounting: SMD Case: TSSOP8 Drain-source voltage: 20V Drain current: 3.9A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 0.87W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 9.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 31A |
Produkt ist nicht verfügbar |