DMG8822UTS-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.3 EUR |
| 5000+ | 0.27 EUR |
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Technische Details DMG8822UTS-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 3.9A, Pulsed drain current: 31A, Power dissipation: 0.87W, Case: TSSOP8, Gate-source voltage: ±8V, On-state resistance: 37mΩ, Mounting: SMD, Gate charge: 9.6nC, Kind of package: 13 inch reel; tape, Kind of channel: enhancement.
Weitere Produktangebote DMG8822UTS-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMG8822UTS-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 4.9A 8TSSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMG8822UTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.9A Pulsed drain current: 31A Power dissipation: 0.87W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMG8822UTS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.9A 8TSSOP
Description: MOSFET 2N-CH 20V 4.9A 8TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMG8822UTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 31A; 870mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.9A
Pulsed drain current: 31A
Power dissipation: 0.87W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH