DMG9926USD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 282500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.22 EUR |
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Technische Details DMG9926USD-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMG9926USD-13 nach Preis ab 0.22 EUR bis 0.55 EUR
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DMG9926USD-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET,N-CHANNEL |
auf Bestellung 12498 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 286114 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
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DMG9926USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG9926USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |