auf Bestellung 127500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG9926USD-13 Diodes Zetex
Description: MOSFET 2N-CH 20V 8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMG9926USD-13 nach Preis ab 0.20 EUR bis 1.14 EUR
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DMG9926USD-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 220000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET,N-CHANNEL |
auf Bestellung 12697 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 222552 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG9926USD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
Produkt ist nicht verfügbar |
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DMG9926USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R |
Produkt ist nicht verfügbar |
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DMG9926USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8 Mounting: SMD On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 6.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG9926USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8 Mounting: SMD On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 6.7A |
Produkt ist nicht verfügbar |