DMG9933USD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.23 EUR |
| 5000+ | 0.22 EUR |
| 12500+ | 0.2 EUR |
| 62500+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG9933USD-13 Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V, Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMG9933USD-13 nach Preis ab 0.22 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMG9933USD-13 | Hersteller : Diodes Incorporated |
MOSFET P-Ch Dual MOSFE 20V VDSS 12V VGSS |
auf Bestellung 4599 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMG9933USD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 334845 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMG9933USD-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.6A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
DMG9933USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Mounting: SMD Drain-source voltage: -20V Drain current: -3A On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1.15W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DMG9933USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Mounting: SMD Drain-source voltage: -20V Drain current: -3A On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1.15W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Case: SO8 |
Produkt ist nicht verfügbar |