auf Bestellung 112500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.17 EUR |
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Technische Details DMG9933USD-13 Diodes Zetex
Description: MOSFET 2P-CH 20V 4.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V, Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMG9933USD-13 nach Preis ab 0.18 EUR bis 0.99 EUR
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DMG9933USD-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2P-CH 20V 4.6A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 165000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9933USD-13 | Hersteller : Diodes Incorporated |
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS |
auf Bestellung 5036 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9933USD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 167689 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9933USD-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.6A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG9933USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.6A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG9933USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.6A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG9933USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1.15W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 6.5nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -20A Case: SO8 Drain-source voltage: -20V Drain current: -3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG9933USD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1.15W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 6.5nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -20A Case: SO8 Drain-source voltage: -20V Drain current: -3A |
Produkt ist nicht verfügbar |