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DMG9933USD-13

DMG9933USD-13 Diodes Incorporated

DMG9933USD.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.24 EUR
5000+0.22 EUR
7500+0.21 EUR
12500+0.2 EUR
17500+0.19 EUR
25000+0.18 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details DMG9933USD-13 Diodes Incorporated

Description: MOSFET 2P-CH 20V 4.6A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.15W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote DMG9933USD-13 nach Preis ab 0.19 EUR bis 1.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMG9933USD-13 DMG9933USD-13 DIODES INCORPORATED DMG9933USD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
144+0.5 EUR
242+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG9933USD-13 DMG9933USD-13 Diodes Incorporated DMG9933USD.pdf MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
auf Bestellung 7827 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.98 EUR
10+0.63 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
2500+0.24 EUR
5000+0.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG9933USD-13 DMG9933USD-13 Diodes Incorporated DMG9933USD.pdf Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 51997 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3A
Gate charge: 6.5nC
On-state resistance: 0.11Ω
Power dissipation: 1.15W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
105+0.69 EUR
144+0.5 EUR
242+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: Diodes Incorporated
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
auf Bestellung 7827 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+0.98 EUR
10+0.63 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
2500+0.24 EUR
5000+0.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 51997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH