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Technische Details DMG9933USD-13 Diodes Zetex
Description: MOSFET 2P-CH 20V 4.6A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.15W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG9933USD-13 nach Preis ab 0.27 EUR bis 1.92 EUR
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DMG9933USD-13 | Diodes Incorporated |
 Description: MOSFET 2P-CH 20V 4.6A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9933USD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -20A Power dissipation: 1.15W Case: SO8 Gate-source voltage: ±12V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 839 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG9933USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 17700 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9933USD-13 | Diodes Incorporated |
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS |
auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG9933USD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.36 EUR |
| 7500+ | 0.31 EUR |
| DMG9933USD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.15W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -20A; 1.15W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -20A
Power dissipation: 1.15W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 0.88 EUR |
| 133+ | 0.64 EUR |
| 226+ | 0.38 EUR |
| 500+ | 0.27 EUR |
| DMG9933USD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 17700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.93 EUR |
| 28+ | 0.77 EUR |
| 50+ | 0.68 EUR |
| 100+ | 0.6 EUR |
| DMG9933USD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
MOSFETs P-Ch Dual MOSFE 20V VDSS 12V VGSS
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.31 EUR |