Produkte > DIODES INCORPORATED > DMGD7N45SSD-13

DMGD7N45SSD-13 Diodes Incorporated


DMGD7N45SSD.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 450V 0.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 450V
Power - Max: 1.64W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 822500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.29 EUR
5000+1.15 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMGD7N45SSD-13 Diodes Incorporated

Description: MOSFET 2N-CH 450V 0.5A 8SO, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 450V, Power - Max: 1.64W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote DMGD7N45SSD-13 nach Preis ab 1.31 EUR bis 4.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMGD7N45SSD-13 DMGD7N45SSD-13 Diodes Incorporated DMGD7N45SSD.pdf Description: MOSFET 2N-CH 450V 0.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 450V
Power - Max: 1.64W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 823977 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+2.63 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.31 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMGD7N45SSD-13 DMGD7N45SSD-13 Diodes Incorporated DMGD7N45SSD.pdf MOSFETs MOSFET BVDSS: 251V-500V
auf Bestellung 5004 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.25 EUR
10+2.57 EUR
100+1.86 EUR
500+1.56 EUR
1000+1.43 EUR
2500+1.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMGD7N45SSD-13 DMGD7N45SSD.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 450V 0.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 450V
Power - Max: 1.64W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 823977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+2.63 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.31 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMGD7N45SSD-13 DMGD7N45SSD.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 251V-500V
auf Bestellung 5004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.25 EUR
10+2.57 EUR
100+1.86 EUR
500+1.56 EUR
1000+1.43 EUR
2500+1.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH