DMGD7N45SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 450V 0.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 450V
Power - Max: 1.64W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produktrezensionen
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Technische Details DMGD7N45SSD-13 Diodes Incorporated
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 500mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 450V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 500mA, Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm, Verlustleistung, p-Kanal: 1.64W, Drain-Source-Spannung Vds, n-Kanal: 450V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.64W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (15-Jan-2018).
Weitere Produktangebote DMGD7N45SSD-13 nach Preis ab 1.31 EUR bis 4.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMGD7N45SSD-13 | DIODES INC. |
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohmtariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 450V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm Verlustleistung, p-Kanal: 1.64W Drain-Source-Spannung Vds, n-Kanal: 450V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.64W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2449 Stücke: Lieferzeit 14-21 Tag (e) |
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DMGD7N45SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 450V 0.5A 8SOQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 450V Power - Max: 1.64W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 823977 Stücke: Lieferzeit 10-14 Tag (e) |
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DMGD7N45SSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 251V-500V |
auf Bestellung 5004 Stücke: Lieferzeit 10-14 Tag (e) |
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DMGD7N45SSD-13 | DIODES INC. |
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohmtariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 450V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 500mA Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm Verlustleistung, p-Kanal: 1.64W Drain-Source-Spannung Vds, n-Kanal: 450V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.64W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2449 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMGD7N45SSD-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 450V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm
Verlustleistung, p-Kanal: 1.64W
Drain-Source-Spannung Vds, n-Kanal: 450V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.64W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 450V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm
Verlustleistung, p-Kanal: 1.64W
Drain-Source-Spannung Vds, n-Kanal: 450V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.64W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.08 EUR |
| 112+ | 1.93 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.4 EUR |
| DMGD7N45SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 450V 0.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 450V
Power - Max: 1.64W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 450V 0.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 450V
Power - Max: 1.64W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 823977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.94 EUR |
| 10+ | 2.63 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.31 EUR |
| DMGD7N45SSD-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 251V-500V
MOSFETs MOSFET BVDSS: 251V-500V
auf Bestellung 5004 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.25 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.34 EUR |
| DMGD7N45SSD-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 450V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm
Verlustleistung, p-Kanal: 1.64W
Drain-Source-Spannung Vds, n-Kanal: 450V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.64W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMGD7N45SSD-13 - Dual-MOSFET, n-Kanal, 450 V, 450 V, 500 mA, 500 mA, 3 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 450V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 500mA
Drain-Source-Durchgangswiderstand, p-Kanal: 3ohm
Verlustleistung, p-Kanal: 1.64W
Drain-Source-Spannung Vds, n-Kanal: 450V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.64W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 4.77 EUR |
| 76+ | 3.08 EUR |
| 112+ | 1.93 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.4 EUR |



