DMHC10H170SFJ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
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Technische Details DMHC10H170SFJ-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V, Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12, Part Status: Active.
Weitere Produktangebote DMHC10H170SFJ-13 nach Preis ab 0.81 EUR bis 2.97 EUR
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DMHC10H170SFJ-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN Packaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
auf Bestellung 6300 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC10H170SFJ-13 | Diodes Incorporated |
MOSFETs 100V Comp Enh FET 20Vgs w/ H-Bridge |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMHC10H170SFJ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 6300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.91 EUR |
| DMHC10H170SFJ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 100V Comp Enh FET 20Vgs w/ H-Bridge
MOSFETs 100V Comp Enh FET 20Vgs w/ H-Bridge
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.97 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| 3000+ | 0.81 EUR |