DMHC10H170SFJ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.84 EUR |
| 6000+ | 0.8 EUR |
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Technische Details DMHC10H170SFJ-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V, Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12, Part Status: Active.
Weitere Produktangebote DMHC10H170SFJ-13 nach Preis ab 0.73 EUR bis 2.99 EUR
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DMHC10H170SFJ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN Packaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
auf Bestellung 8622 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC10H170SFJ-13 | Hersteller : Diodes Incorporated |
MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge |
auf Bestellung 3326 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMHC10H170SFJ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin VDFN EP T/R |
auf Bestellung 279000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMHC10H170SFJ-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin VDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMHC10H170SFJ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2.3/-1.9A Pulsed drain current: 13...-11A Power dissipation: 2.1W Case: V-DFN5045-12 Gate-source voltage: ±20V On-state resistance: 200/300mΩ Mounting: SMD Gate charge: 9.7/17.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMHC10H170SFJ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin VDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMHC10H170SFJ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2.3/-1.9A Pulsed drain current: 13...-11A Power dissipation: 2.1W Case: V-DFN5045-12 Gate-source voltage: ±20V On-state resistance: 200/300mΩ Mounting: SMD Gate charge: 9.7/17.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |