DMHC3025LSDQ-13 Diodes Zetex
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.51 EUR |
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Technische Details DMHC3025LSDQ-13 Diodes Zetex
Description: MOSFET 2N/2P-CH 30V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A, Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMHC3025LSDQ-13 nach Preis ab 0.6 EUR bis 2.1 EUR
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DMHC3025LSDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N/2P-CH 30V 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC3025LSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 30V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 14743 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC3025LSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP |
auf Bestellung 12819 Stücke: Lieferzeit 14-28 Tag (e) |
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DMHC3025LSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 30V 6A/4.2A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMHC3025LSDQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 30V 6A/4.2A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMHC3025LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.1/-4.3A Pulsed drain current: 60...-30A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Gate charge: 11.7/11.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMHC3025LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.1/-4.3A Pulsed drain current: 60...-30A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Gate charge: 11.7/11.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |