DMHC6070LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details DMHC6070LSD-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N and 2 P-Channel (Full Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMHC6070LSD-13 nach Preis ab 0.67 EUR bis 2.78 EUR
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DMHC6070LSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 11437 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC6070LSD-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Drain to Source Voltage (Vdss): 60V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N and 2 P-Channel (Full Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 6573 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMHC6070LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 11437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| 2500+ | 0.67 EUR |
| DMHC6070LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.78 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |