DMHT10H032LFJ-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 1+ | 5.56 EUR |
| 10+ | 3.73 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.66 EUR |
| 1000+ | 2.43 EUR |
| 3000+ | 0.74 EUR |
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Technische Details DMHT10H032LFJ-13 Diodes Incorporated
Description: MOSFET 4N-CH 100V 6A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerVDFN, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V, Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: V-DFN5045-12 (Type C).
Weitere Produktangebote DMHT10H032LFJ-13 nach Preis ab 0.82 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| DMHT10H032LFJ-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 100V; 6A Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 6A On-state resistance: 25mΩ Mounting: SMD Gate charge: 11.9nC Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMHT10H032LFJ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 6A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 6A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 6A
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 11.9nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.82 EUR |