DMHT10H032LFJ-13 DIODES INC.
Hersteller: DIODES INC.Description: DIODES INC. - DMHT10H032LFJ-13 - Dual-MOSFET, n-Kanal
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Verlustleistung Pd: 900mW
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.025ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2486 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details DMHT10H032LFJ-13 DIODES INC.
Description: MOSFET 4N-CH 100V 6A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerVDFN, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V, Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: V-DFN5045-12 (Type C).
Weitere Produktangebote DMHT10H032LFJ-13 nach Preis ab 0.73 EUR bis 3.57 EUR
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DMHT10H032LFJ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMHT10H032LFJ-13 - Dual-MOSFET, n-Kanal tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMHT10H032LFJ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V V-DFN5045-12 T&R 3K |
auf Bestellung 1820 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMHT10H032LFJ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 4N-CH 100V 6A 12VDFN Packaging: Tape & Reel (TR) Package / Case: 12-PowerVDFN Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: V-DFN5045-12 (Type C) |
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