DMHT3006LFJ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 4N-CH 30V 13A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.22 EUR |
| 6000+ | 1.16 EUR |
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Technische Details DMHT3006LFJ-13 Diodes Incorporated
Description: MOSFET 4N-CH 30V 13A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerVDFN, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12 (Type C).
Weitere Produktangebote DMHT3006LFJ-13 nach Preis ab 1.16 EUR bis 2.96 EUR
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DMHT3006LFJ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 4N-CH 30V 13A 12VDFN Packaging: Cut Tape (CT) Package / Case: 12-PowerVDFN Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 (Type C) |
auf Bestellung 8925 Stücke: Lieferzeit 21-28 Tag (e) |
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DMHT3006LFJ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 11546 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMHT3006LFJ-13 | Hersteller : Diodes Inc |
High Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMHT3006LFJ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W Case: V-DFN5045-12 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2.1W Gate-source voltage: ±20V Pulsed drain current: 80A Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 10A On-state resistance: 15mΩ Gate charge: 17nC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMHT3006LFJ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W Case: V-DFN5045-12 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2.1W Gate-source voltage: ±20V Pulsed drain current: 80A Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 10A On-state resistance: 15mΩ Gate charge: 17nC |
Produkt ist nicht verfügbar |