| Anzahl | Preis |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.85 EUR |
| 3000+ | 0.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMHT3006LFJ-13 Diodes Incorporated
Description: MOSFET 4N-CH 30V 13A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerVDFN, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12 (Type C).
Weitere Produktangebote DMHT3006LFJ-13 nach Preis ab 0.9 EUR bis 2.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMHT3006LFJ-13 | Diodes Incorporated |
 Description: MOSFET 4N-CH 30V 13A 12VDFNPackaging: Cut Tape (CT) Package / Case: 12-PowerVDFN Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 (Type C) |
auf Bestellung 1453 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMHT3006LFJ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 4N-CH 30V 13A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
Description: MOSFET 4N-CH 30V 13A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerVDFN
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12 (Type C)
auf Bestellung 1453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.9 EUR |