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DMHT6016LFJ-13

DMHT6016LFJ-13 Diodes Incorporated


DMHT6016LFJ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 4N-CH 60V 14.8A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.17 EUR
6000+ 1.12 EUR
Mindestbestellmenge: 3000
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Technische Details DMHT6016LFJ-13 Diodes Incorporated

Description: MOSFET 4N-CH 60V 14.8A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12, Part Status: Active.

Weitere Produktangebote DMHT6016LFJ-13 nach Preis ab 1.23 EUR bis 2.6 EUR

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DMHT6016LFJ-13 DMHT6016LFJ-13 Hersteller : Diodes Incorporated DMHT6016LFJ.pdf Description: MOSFET 4N-CH 60V 14.8A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 10727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.59 EUR
10+ 2.15 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 7
DMHT6016LFJ-13 DMHT6016LFJ-13 Hersteller : Diodes Incorporated DIOD_S_A0003108750_1-2542335.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 8843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.6 EUR
10+ 2.16 EUR
100+ 1.74 EUR
250+ 1.65 EUR
500+ 1.44 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 2
DMHT6016LFJ-13 Hersteller : DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMHT6016LFJ-13 Hersteller : DIODES INCORPORATED DMHT6016LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar