DMHT6016LFJ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 4N-CH 60V 14.8A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Drain to Source Voltage (Vdss): 60V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.17 EUR |
| 6000+ | 1.12 EUR |
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Technische Details DMHT6016LFJ-13 Diodes Incorporated
Description: MOSFET 4N-CH 60V 14.8A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12, Part Status: Active, Drain to Source Voltage (Vdss): 60V.
Weitere Produktangebote DMHT6016LFJ-13 nach Preis ab 1.23 EUR bis 2.6 EUR
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DMHT6016LFJ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 4N-CH 60V 14.8A 12VDFN Packaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active Drain to Source Voltage (Vdss): 60V |
auf Bestellung 10727 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHT6016LFJ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 8843 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMHT6016LFJ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W Kind of package: reel; tape Power dissipation: 2.7W Polarisation: unipolar Case: V-DFN5045-12 Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 11.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMHT6016LFJ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W Kind of package: reel; tape Power dissipation: 2.7W Polarisation: unipolar Case: V-DFN5045-12 Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 11.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |