DMN1003UCA6-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN3518-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN3518-6
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Technische Details DMN1003UCA6-7 Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN3518-6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.67W, Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X3-DSN3518-6.
Weitere Produktangebote DMN1003UCA6-7 nach Preis ab 0.57 EUR bis 1.42 EUR
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DMN1003UCA6-7 | Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN3518-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.67W Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN3518-6 |
auf Bestellung 8990 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1003UCA6-7 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 8V-24V |
auf Bestellung 2325 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1003UCA6-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN3518-6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN3518-6
Description: MOSFET 2N-CH X3-DSN3518-6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN3518-6
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 16+ | 1.14 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| DMN1003UCA6-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFETBVDSS: 8V-24V
MOSFETs MOSFETBVDSS: 8V-24V
auf Bestellung 2325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.57 EUR |