DMN1003UCA6-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN3518-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN3518-6
Description: MOSFET 2N-CH X3-DSN3518-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.67W
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN3518-6
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.6 EUR |
6000+ | 0.57 EUR |
9000+ | 0.55 EUR |
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Technische Details DMN1003UCA6-7 Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN3518-6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.67W, Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X3-DSN3518-6.
Weitere Produktangebote DMN1003UCA6-7 nach Preis ab 0.83 EUR bis 2.08 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN1003UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN3518-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.67W Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN3518-6 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1003UCA6-7 | Hersteller : Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V |
auf Bestellung 2409 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN1003UCA6-7 | Hersteller : Diodes Inc | Trans MOSFET N-CH 12V 23.6A 6-Pin X3-DSN T/R |
Produkt ist nicht verfügbar |