auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
Produktrezensionen
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Technische Details DMN1004UFV-13 Diodes Zetex
Description: MOSFET N-CH 12V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V.
Weitere Produktangebote DMN1004UFV-13 nach Preis ab 0.26 EUR bis 1.36 EUR
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DMN1004UFV-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 12V 70A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 12V 70A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V |
auf Bestellung 28728 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMN1004UFV-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMN1004UFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 12V Drain current: 50A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN1004UFV-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |
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| DMN1004UFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 12V Drain current: 50A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |