DMN1004UFV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
| Anzahl | Preis |
|---|---|
| 2000+ | 0.39 EUR |
| 4000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| 10000+ | 0.32 EUR |
| 14000+ | 0.31 EUR |
| 20000+ | 0.3 EUR |
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Technische Details DMN1004UFV-7 Diodes Incorporated
Description: MOSFET N-CH 12V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V.
Weitere Produktangebote DMN1004UFV-7 nach Preis ab 0.25 EUR bis 1.53 EUR
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DMN1004UFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD Case: PowerDI®3333-8 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 5.1mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Drain current: 55A Drain-source voltage: 12V Kind of package: 7 inch reel; tape |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFV-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 12783 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 70A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V |
auf Bestellung 54842 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1004UFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 100+ | 0.72 EUR |
| 114+ | 0.63 EUR |
| 165+ | 0.43 EUR |
| DMN1004UFV-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 12783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.28 EUR |
| 4000+ | 0.25 EUR |
| DMN1004UFV-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
auf Bestellung 54842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |



