auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.09 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.99 EUR |
| 3000+ | 0.48 EUR |
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Technische Details DMN1006UCA6-7 Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X3-DSN2718-6.
Weitere Produktangebote DMN1006UCA6-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| DMN1006UCA6-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 12V 16.6A 6-Pin X3-DSN T/R |
Produkt ist nicht verfügbar |
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| DMN1006UCA6-7 | Hersteller : DIODES INCORPORATED |
DMN1006UCA6-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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DMN1006UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
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DMN1006UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |