| Anzahl | Preis |
|---|---|
| 2+ | 1.61 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
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Technische Details DMN1006UCA6-7 Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6, Supplier Device Package: X3-DSN2718-6, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V, Power - Max: 2.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, No Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN1006UCA6-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMN1006UCA6-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH X3-DSN2718-6Supplier Device Package: X3-DSN2718-6 Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 2.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
DMN1006UCA6-7 | Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Supplier Device Package: X3-DSN2718-6 Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 2.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMN1006UCA6-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6
Supplier Device Package: X3-DSN2718-6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH X3-DSN2718-6
Supplier Device Package: X3-DSN2718-6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN1006UCA6-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6
Supplier Device Package: X3-DSN2718-6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH X3-DSN2718-6
Supplier Device Package: X3-DSN2718-6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH