auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.61 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
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Technische Details DMN1006UCA6-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 12V, Drain current: 13.2A, Pulsed drain current: 80A, Case: X3-DSN2718-6, Gate-source voltage: ±12V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 35.2nC, Kind of package: 7 inch reel; tape, Kind of channel: enhancement, Power dissipation: 2.4W, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMN1006UCA6-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| DMN1006UCA6-7 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 12V 16.6A 6-Pin X3-DSN T/R |
Produkt ist nicht verfügbar |
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| DMN1006UCA6-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 13.2A Pulsed drain current: 80A Case: X3-DSN2718-6 Gate-source voltage: ±12V On-state resistance: 9mΩ Mounting: SMD Gate charge: 35.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Power dissipation: 2.4W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN1006UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
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DMN1006UCA6-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
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| DMN1006UCA6-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 13.2A Pulsed drain current: 80A Case: X3-DSN2718-6 Gate-source voltage: ±12V On-state resistance: 9mΩ Mounting: SMD Gate charge: 35.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Power dissipation: 2.4W |
Produkt ist nicht verfügbar |