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DMN1008UFDF-13

DMN1008UFDF-13 Diodes Incorporated

DMN1008UFDF.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 12.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 320000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN1008UFDF-13 Diodes Incorporated

Description: MOSFET N-CH 12V 12.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN1008UFDF-13 nach Preis ab 0.18 EUR bis 0.93 EUR

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DMN1008UFDF-13 DMN1008UFDF-13 Hersteller : Diodes Incorporated DIOD_S_A0009865613_1-2543531.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.18 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN1008UFDF-13 DMN1008UFDF-13 Hersteller : Diodes Incorporated DMN1008UFDF.pdf Description: MOSFET N-CH 12V 12.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 327955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.2 EUR
Mindestbestellmenge: 19
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DMN1008UFDF-13 DMN1008UFDF-13 Hersteller : Diodes Inc dmn1008ufdf.pdf Trans MOSFET N-CH 12V 12.2A 6-Pin UDFN EP T/R
auf Bestellung 1250000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH